The high growth rate of hand-held devices and the emergence of electric vehicles are driving the power semiconductor market, with new designs that will enable higher current and voltage capabilities. These devices either incorporate deeper isolation trenches than conventional power devices, or new materials such as GaN or SiC.
Benefits of SPTS Etch Processes for Power Semiconductor Applications
- Deeper trenches up to 50:1 aspect ratio, using DRIE
- Unique source option for etching SiC etching - 50% faster than conventional ICP
|HAR silicon power trench
|| SiC via