Intro to HF Release Etch
HF etching is a dry vapor (plasma-less) etch process to remove sacrificial oxide layers, primarily used to release silicon MEMS structures.
ダウンロードDry vapor etch utilising HF or XeF2 is used for the isotropic etch removal of sacrificial silicon or oxide layers to release flexures or other MEMS devices with enhanced selectivity and without stiction. This provides controlled, residue-free etching across a wide range of etch rates.
Key applications for vapor release technology include inertial sensors, mirror arrays, resonators, RF MEMS, micro-actuators and microphones.
HF etching is a dry vapor (plasma-less) etch process to remove sacrificial oxide layers, primarily used to release silicon MEMS structures.
ダウンロードXeF2 vapor etching is a highly selective isotropic etch for removing sacrificial layers of Si, Mo or Ge to release MEMS miccrostructures.
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