Power Crazy! Critical Plasma Etching Applications to Meet the Demands for Wide Bandgap Devices

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High power devices are required for infrastructure projects and as RF connectivity proliferates, end applications such as electric vehicles, wind energy and cellular base stations are driving the demand for higher voltages and higher frequencies.

SiC trenches with bottom corner roundingSiC and GaN are the primary wide bandgap (WBG) semiconductors in use to address these challenging requirements. According to Yole the SiC and GaN power device markets will reach $2B and $550M, respectively, by 2024. Critical to the fabrication of these devices are the plasma etching steps.

This webinar will review specific etch needs and show examples of high productivity solutions. These will include hard-mask open and shallow SiC trench etching, deep SiC via formation for RF and low damage SiNx and GaN etching primarily for GaN on Si structures. End-point detection, an essential method of process control, will also be discussed.

[1] Yole Développement, "Power SiC 2019: Materials, Devices, and Applications" (July 2019)

[2] Yole Développement, "Power GaN 2019: Epitaxy, Devices, Applications and Technology Trends" (Nov 2019)

Presenter: Dr Dave Thomas,  Senior Director, Etch Product Management

Nick Knight

Dr Thomas worked for Philips Components and Nortel before joining SPTS (at that time Electrotech) in 1994 as a PVD Process Engineer, becoming PVD Technology Manager for Japan in 1996.

He became Product Marketing Manager for Etch Products in 1997 and promoted to Marketing Director for Etch Products in 2008, responsible for SPTS’s etch product line, including marketing, product positioning & sales support.

Dr. Thomas holds a BSc in Chemistry (Leeds University), MSc in Surface Chemistry & PhD Plasma Etching & Deposition (University of Bristol), and actively participates, and presents widely on etch and deposition technologies at global conferences. He has also authored over 30 technical articles and papers.