Advances in doped AlN deposition techniques for next generation PiezoMEMS

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In BAW and PiezoMEMS devices based on released membrane structures, aluminium nitride (AlN) film stress state is of utmost importance and to maximize yield, manufacturers look to minimize stress variation across the wafer. When scandium (Sc) is added to the film the problem becomes more demanding, as stress range tends to worsen with increased Sc content.

In this webinar we present a novel solution providing symmetrical control and adjustment of stress for AlN films with different Sc content. We demonstrate excellent WIW stress performance, the ability to locally tune stress to compensate for center to edge variations in Sc, and approaches to prevent formation of crystallite defects, maximizing yield.

Presenter: Dr. Anthony Barker, Senior Product Manager, PVD Products.

Anthony Barker joined Surface Technology Systems (STS) in 1997 as Etch Process Engineer. He went to manager STS’ non-Si based Etch and deposition process groups.  After leaving STS he joined Trikon as Etch Process Engineer in 2005, which became Aviza Technology and then merged with STS in 2009 to form SPTS Technologies. Most recently, Anthony worked as Principal Process Engineer in R &D Accounts group before joining SPTS’s PVD Product Management team in May 2017.

Before STS, Anthony worked as Thin Film Process Engineer at Gems Sensors. Dr. Barker has a B. Eng Honours degree in Materials Engineering and a Ph.D in Electronic Materials in association with Rolls Royce, both from Swansea University