Intro to HF Release Etch
HF etching is a dry vapor (plasma-less) etch process to remove sacrificial oxide layers, primarily used to release silicon MEMS structures.
다운로드Vapor Release Etch for Photonics
Dry, vapor phase etch utlizing anhydrous HF of XeF2 is used for the isotropic etching of sacrificial silicon or oxide layers with high selectivity and without stiction. These technologies provide controlled, residue-free etching across a wide range of etch rates.
Key applications for vapor release technology include micromirror arrays and other optical MEMS devices, waveguides, and µLEDs.
Benefits of SPTS Vapor HF Etch for Photonics
- Dry process, which eliminates stiction and corrosion
- Eliminates the need for critical point drying
- Repeatable, stable performance with a wide process window
- Compatible with a wide range of device materials including metals, especially unprotected aluminium (Al) mirrors and bond pads
- Reduced pressure operation keeps etch by-products in the gas phase ensuring maximum feature penetration and no condensation
Benefits of SPTS XeF2 Etch for Photonics
- Isotropic etching Si, Ge, Mo & SiGe with an extremely high selectivity, compared to most other mask and device materials
- Allows long undercuts and no damage to very thin device structures
- Enables the use of low-cost photoresist masks
- Can be used to release MEMS structures after dicing and packaging
- Dry process - eliminates stiction and the need for critical point drying
- Repeatable, stable performance with a wide process window
- Gas phase processing ensures maximum feature penetration through small holes and spaces
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