SiC Etch for Power & RF Devices
SiC is a wide bandgap material used in power applications and GaN-on-SiC RF devices. It is very difficult to etch but SPTS' Synapse etch system can provide etch rates 2-4x faster than conventional ICP etching.
下载Trench Etching & New Materials
The high growth rate of hand-held devices and the emergence of electric vehicles are driving the power semiconductor market, with new designs that will enable higher current and voltage capabilities. These devices either incorporate deeper isolation trenches than conventional power devices, or new materials such as GaN or SiC.
Benefits of SPTS Etch Processes for Power Semiconductor Applications
- Deeper Si trenches up to 50:1 aspect ratio, using DRIE
- Unique source option for etching SiC etching - 50% faster than conventional ICP
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