The key building block in MEMS fabrication is deep silicon (Si) etching; with processes including high rate etching, high aspect ratio, through-wafer etches and etching to buried oxide layers, including SOI wafers.
A patented dual plasma source arrangement produces uniform plasma density in the chamber which improves profile/depth uniformity and controls profile tilting.
A patented thick dielectric electrostatic chuck (ESC) allows wafer-less plasma cleans for best process stability and clamping through carriers, such as glass.
The industry’s highest productivity metrics can be achieved on SPTS’ DRIE equipment, with high uptimes and mean time between clean (MTBC).
Benefits of SPTS Si DRIE
Highest etch rate in MEMS mass production - high throughput
Highest aspect ratio (AR) in mass production
Control of scalloping
Exceptional tilt control from dual plasma source for next generation MEMS sensor devices
Patented bias pulsing for notch control at oxide interfaces
Best in class uniformity from dual source
Claritas™ - the industry’s only end-point detection system for ultra-low open area and high process pressures - for process control and excellent wafer-to-wafer uniformity.
Related Product Infomation
Introduction to Si DRIE
Brief introduction to silicon DRIE (The Bosch Process) and its application within MEMS, Advanced Packaging and Power Device manufacturing.
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