SPT's LPCVD SiN process that combines the excellent stress control and process repeatability of a PECVD process together with the benefits of low wet etch rate and low ownership cost of an LPCVD system
Surface transformation to remove the "scallops", created by silicon DRIE during MEMS manufacturing, can be achieved by annealing the Si wafers at high temperature (~1100°C) in a H2 ambient in SPT's RVP furnace.
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